近期论文

1. Xiaoyan Liu, Jinfeng Kang, Ruqi Han, Direct Tunneling Current Model for MOS Devices with Ultra-thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect, Solid State Communication，Vol 125, n 3-4, January, 2003, p 219-223，被SCI、EI收录 2. Liu Xiaoyan, KANG Jinfeng, HAN Ruqi, Gate Current for MOSFETs with High K Dielectric Materials, Chinese J. Semiconductor Vol 23, n 10, October, 2002, p 1009-1013，被EI收录 3. Xiaoyan Liu, Jinfeng Kang; Lei Sun, Ruqi Han. Threshold Voltage Model for MOSFETs with High-K Gate Dielectrics IEEE Electron Device Lett. Vol.23, No.8, 2002,270,被SCI、EI收录 4. Xiaoyan Liu; Shuzuo Lou; Zhiliang Xia; Dechao Guo; Huiwen Zhu; Jinfeng Kang; Ruqi Han, Characteristics of different structure sub-100nm MOSFETs with high-k gate dielectrics, , 2001. Proceedings. 6th International Conference on Solid-State and Integrated-Circuit Technology, Volume: 1 , 2001 333 –336 5. Xiaoyan Liu; Kui Luo; Gang Du; Lei Sun; Jinfeng Kang; Ruqi Han, N channel SOI Schottky barrier tunneling transistors, Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on, Volume: 1 , 2001 Page(s): 562 –565 6. Xiaoyan Liu, Jinfeng Kang, Ruqi Han, The Influence of Tunneling Effect and Inversion Layer Quantization Effect on Threshold Voltage of Deep Submicron MOSFET’ Solid State Electronics, 44(2000), pp1435-1439，被SCI、EI收录，被Hou YT, Li MF，IEEE T ELECTRON DEV 48 (12): 2893-2898 DEC 2001引用 7. Xiaoyan Liu, Jinfeng Kang, Ruqi Han, Yangyuan Wang，Physics of sub 0.1 micron CMOS, AEARU 1st Microelectronics Workshop, Seoul, pp.5-7, 1999 8. 刘晓彦 刘恩峰 杜刚 刘弋波 夏志良 韩汝琦,纳米级MOSFET的模拟，半导体学报，Vol.24, 148, 2003年5月, 第二届纳米技术与应用会议邀请报告，2002 9. Sun Lei , Liu Xiaoyan, Du Gang, Han Ruqi, Monte Carlo simulation of Schottky contact with direct tunneling model ， Semiconductor Science and Technology, vol. 18(6)), pp.576 2003, June, 被SCI、EI收录 10. Kang, Jinfeng; Liu, Xiaoyan; Tian, Dayu; Wang, Wei; Lian, Guijun; Xiong, Guangcheng; Han, Ruqi, The post-deposition anneal effects on the electrical properties of HfO2 gate dielectric deposited by ion beam sputtering at room temperature, Chinese Journal of Electronics, v 12, n 2, April, 2003, p 270-272被SCI收录 11. Enfeng Liu; Xiaoyan Liu; Ruqi Han, 3-D simulation of FINFET, will be published in Chinese J. Semiconductor, Sept. 2002, p 909-913被EI收录 12. Du Gang, Liu Xiaoyan, Sun Lei, Yue Jiaping, Han Ruqi, Patrice Houlet, Hideaki Fujitan Monte Carlo Simulation of 50 nm n-channel Schottky Barrier Tunneling Transistors Chinese Journal of Electronics Vol.11, No.2 Apr 2002 p200-203， 被SCI收录 13. 夏志良，刘晓彦，刘恩锋，韩汝琦，亚100nm多栅MOSFET的三维模拟，半导体学报，Vol.24, p140,2003.5 14. Huiwen Zhu, Xiaoyan Liu, Chao Shen, Jinfeng Kang , Ruqi Han, “Characterization of Sub-100nm MOSFETs With High-k Gate Dielectrics”, Chinese J. Semiconductor，Vol.22, No.9,1107 (2001)， 被EI收录 15. 康晋锋，刘晓彦，王玮，俞挺，韩汝琦, 连贵君，张朝晖，熊光成, “CeO2高K栅介质薄膜的制备工艺及其电学性质研究”, 半导体学报, Vol.22(7), 865 (2001) 被EI收录 16. Jinfeng Kang, Xiaoyan Liu, Guijun Lian, Zhaohui Zhang, Guangcheng Xiong, Xudong Guan, Ruqi Han, Yangyuan Wang, “Crystal-orientation controlled epitaxial CeO2 dielectric thin films on Si(100) substrates using pulsed laser deposition”, Microelectronic Engineering Vol.56(1-2), p 191-194 (2001) 被SCI、EI收录 17. Jinfeng Kang; Xiaoyan Liu; Ruqi Han; Yangyuan Wang; Lian, C.J.; Kun Xun; Yu, D.P.; Xiong, G.C.; Wu, S.C.; Wang, Y.G., Structural and electrical properties of CeO/sub 2//Si with nitrided interfacial layer by nitrogen ion beam bombardment, Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on , Volume: 1 , 2001 Page(s): 321 –324 18. Jinfeng Kang, Xiaoyan Liu, Dayu Tian, Wei Wang, Ruqi Han, Yangyuan Wang, “Characteristics of HfO2 Gate Dielectric With An Improved Surface Preparation Process”, 32nd IEEE Semiconductor Interface Specialists Conference (Washington, D.C.), Nov. 29-31, P-13 (2001)